Transient Characteristic of a Metal-Oxide Semiconductor Field Effect Transistor in an Automotive Regulator in High Temperature Surroundings

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

Simulation of Self-Heating and Temperature Effect in GaN-based Metal-Semiconductor Field-Effect Transistor

Two-dimensional electro-thermal simulations of GaN-based metal-semiconductor fieldeffect transistor are performed in the framework of the drift-diffusion model. The dependence of the hot spot temperature in transistors with many gates on the gate-to-gate pitch is studied. The case of SiC substrate is compared to the case of sapphire substrate. The ambient temperature effect on transistor perfor...

High-frequency compact analytical noise model for double-gate metal-oxide-semiconductor field-effect transistor

Silicon-on-insulator SOI metal-oxide-semiconductor field-effect transistors MOSFETs are excellent candidates to become an alternative to conventional bulk technologies. The most promising SOI devices for the nanoscale range are based on multiple gate structures such as double-gate DG MOSFETs. These devices could be used for high-frequency applications due to the significant increase in the tran...

High Temperature Modeling and Characterization of 6H Slicon Carbide Metal Oxide Semiconductor Field Effect Transistors

In this communication, we expand upon previous work (S. K. Powell, N. Goldsman, J. M. McGarrity, J. Bernstein, C. J. Scozzie, A. Lelis, J. Appl. Phys. 92, 4053 (2002)), by applying the device model to 6H SiC MOSFETs operating at high temperatures. We compare the model predictions with the device measurements from room temperature to 200C and find agreement.